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| ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1650 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case A-24 (K-PUK) * High profile hockey PUK A-24 (K-PUK) RoHS COMPLIANT * Lead (Pb)-free * Designed and qualified for industrial level TYPICAL APPLICATIONS PRODUCT SUMMARY IT(AV) 1650 A * DC motor controls * Controlled DC power supplies * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) TEST CONDITIONS VALUES 1650 Ths 55 3080 IT(RMS) Ths 50 Hz ITSM 60 Hz 50 Hz 60 Hz VDRM/VRRM tq TJ Typical 25 30 500 A 32 000 4651 4250 1200 to 2000 200 - 40 to 125 V s C kA2s UNITS A C A C I2 t ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 12 14 ST1200C..K 16 18 20 VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM IDRM/IRRM MAXIMUM AND OFF-STATE VOLTAGE NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ MAXIMUM V V mA 1200 1400 1600 1800 2000 1300 1500 1700 1900 2100 100 Document Number: 94394 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 ST1200C..KP Series Vishay High Power Products Phase Control Thyristors (Hockey PUK Version), 1650 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current at heatsink temperature Maximum RMS on-state current SYMBOL IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled DC at 25 C heatsink temperature double side cooled t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2 t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage Maximum holding current Typical latching current I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM IH IL No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied VALUES 1650 (700) 55 (85) 3080 30 500 32 000 25 700 Sinusoidal half wave, initial TJ = TJ maximum 26 900 4651 4250 3300 3000 46 510 0.91 1.01 0.21 0.19 1.73 600 1000 kA2s V kA2s A UNITS A C t = 0.1 to 10 ms, no voltage reapplied (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum (I > x IT(AV)), TJ = TJ maximum Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse TJ = 25 C, anode supply 12 V resistive load m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current Typical delay time Typical turn-off time SYMBOL dI/dt td tq TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s VALUES 1000 1.9 s 200 UNITS A/s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current SYMBOL dV/dt IRRM, IDRM TEST CONDITIONS TJ = TJ maximum linear to 80 % rated VDRM TJ = TJ maximum, rated VDRM/VRRM applied VALUES 500 100 UNITS V/s mA www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 94394 Revision: 11-Aug-08 ST1200C..KP Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 1650 A TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM + VGM - VGM TJ = - 40 C DC gate current required to trigger IGT TJ = 25 C TJ = 125 C TJ = - 40 C DC gate voltage required to trigger VGT TJ = 25 C TJ = 125 C DC gate current not to trigger IGD TJ = TJ maximum DC gate voltage not to trigger VGD Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied 200 100 50 1.4 1.1 0.9 10 TJ = TJ maximum, tp 5 ms TEST CONDITIONS TJ = TJ maximum, tp 5 ms TJ = TJ maximum, f = 50 Hz, d% = 50 VALUES TYP. 16 3 3.0 20 5.0 200 3.0 mA V mA MAX. UNITS W A V 0.25 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum operating junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to heatsink Maximum thermal resistance, case to heatsink Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet SYMBOL TJ TStg RthJ-hs DC operation single side cooled DC operation double side cooled DC operation single side cooled DC operation double side cooled TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.0.42 0.021 0.006 0.003 24 500 (2500) 425 A-24 (K-PUK) N (kg) g K/W UNITS C RthC-hs RthJC CONDUCTION CONDUCTION ANGLE 180 120 90 60 30 SINUSOIDAL CONDUCTION SINGLE SIDE 0.003 0.004 0.005 0.007 0.012 DOUBLE SIDE 0.003 0.004 0.005 0.007 0.012 RECTANGULAR CONDUCTION SINGLE SIDE 0.002 0.004 0.005 0.007 0.012 DOUBLE SIDE 0.002 0.004 0.005 0.007 0.012 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Document Number: 94394 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 ST1200C..KP Series Vishay High Power Products Maximum Allowable Heatsink Temperature (C) Phase Control Thyristors (Hockey PUK Version), 1650 A Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 0 200 130 120 110 100 90 80 70 60 50 40 30 20 0 30 ST1200C..K Series (Single Side Cooled) RthJ-hs (DC) = 0.042 K/W ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W Conduction Angle 30 60 90 120 180 400 600 800 1000 1200 Conduction Period 60 90 120 180 600 1200 DC 3600 1800 2400 3000 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 30 20 0 400 30 ST1200C..K Series (Single Side Cooled) R thJ-hs (DC) = 0.042 K/W 4000 3500 3000 2500 2000 1500 1000 500 0 0 Conduction Period 180 120 90 60 30 RMS Limit 60 90 120 180 800 1200 Conduction Angle ST1200C..K Series T J = 125C 400 800 1200 1600 2000 DC 1600 2000 Average On-state Current (A) Average On-state Current (A) Fig. 2 - Current Ratings Characteristics Fig. 5 - On-State Power Loss Characteristics Maximum Allowable Heatsink Temperature (C) 130 120 110 100 90 80 70 60 50 40 30 0 400 Maximum Allowable Heatsink Temperature (C) ST1200C..K Series (Double Side Cooled) R thJ-hs (DC) = 0.021 K/W 5000 4000 3000 2000 1000 0 DC 180 120 90 60 30 RMS Limit Conduction Period ST1200C..K Series TJ = 125C 0 600 1200 1800 2400 3000 3600 Average On-state Current (A) Conduction Angle 30 60 90 120 180 2000 800 1200 1600 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics Fig. 6 - On-State Power Loss Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 94394 Revision: 11-Aug-08 ST1200C..KP Series Phase Control Thyristors Vishay High Power Products (Hockey PUK Version), 1650 A Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) 28000 26000 24000 22000 20000 18000 16000 14000 12000 1 At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 32000 30000 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C 28000 No Voltage Reapplied 26000 Rated VRRM Reapplied 24000 22000 20000 18000 16000 14000 ST1200C..K Series 10 100 ST1200C..K Series 0.1 Pulse Train Duration (s) 12000 0.01 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled 10000 Instantaneous On-state Current (A) 1000 TJ = 25C TJ = 125C ST1200C..K Series 100 0.5 1 1.5 2 2.5 3 Instantaneous On-state Voltage (V) Fig. 9 - On-State Voltage Drop Characteristics Transient Thermal Impedance Z thJ-hs (K/W) 0.1 Steady State Value R thJ-hs = 0.042 K/W (Single Side Cooled) R thJ-hs = 0.021 K/W (Double Side Cooled) (DC Operation) 0.01 ST1200C..K Series 0.001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Document Number: 94394 Revision: 11-Aug-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 ST1200C..KP Series Vishay High Power Products 100 Instantaneous Gate Voltage (V) Phase Control Thyristors (Hockey PUK Version), 1650 A (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms 10 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s (a) (b) Tj=-40 C Tj=25 C 1 VGD 0.1 0.001 IGD Device: ST1200C..K Series 0.01 0.1 1 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics Tj=125 C (1) (2) (3) Frequency Limited by PG(AV) 10 100 ORDERING INFORMATION TABLE Device code ST 1 1 2 3 4 5 6 7 112 2 - 0 3 C 4 20 5 K 6 1 7 8 PbF 9 Thyristor Essential part number 0 = Converter grade C = Ceramic PUK Voltage code x 100 = VRRM (see Voltage Ratings table) K = PUK case A-24 (K-PUK) 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = Eyelet terminals (gate and auxiliary cathode soldered leads) 3 = Fast-on terminals (gate and auxiliary cathode soldered leads) 8 9 - Critical dV/dt: Lead (Pb)-free None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95081 www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 94394 Revision: 11-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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